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IRG4BC30KD-SPBF

INSUKATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC30KD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFRRECOVERYDIODE

IRF

International Rectifier

IRG4BC30KD-STRR

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC30KPBF

INSULATEDGATEBIPOLARTRANSISTOR

ShortCircuitRatedUltraFastIGBT

IRF

International Rectifier

IRG4BC30KPBF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

IRF

International Rectifier

IRG4BC30KS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4BC30K-S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4BC30K-S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

IRF

International Rectifier

IRG4BC30K-SPBF

INSULATEDGATEBIPOLARTRANSISTORShortCiruitRatedUltraFastIGBT

INSULATEDGATEBIPOLARTRANSISTORShortCiruitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol tsc=10μs,@360VVCE(start),TJ=125°C VGE=15V •Conbineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidest

IRF

International Rectifier

IRG4BC30S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

Features •Standard:optimizedforminimumsaturation voltageandlowoperatingfrequencies(

IRF

International Rectifier

详细参数

  • 型号:

    IRG4BC30KD-SHR

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans IGBT Chip N-CH 600V 28A 3-Pin(2+Tab) D2PAK

  • 功能描述:

    TRANS IGBT CHIP N-CH 600V 28A 3PIN D2PAK - Rail/Tube

供应商型号品牌批号封装库存备注价格
IR
22+
6000
终端可免费供样,支持BOM配单
询价
IR
23+
8000
只做原装现货
询价
IR
23+
7000
询价
Infineon Technologies
21+
D2PAK
13880
公司只售原装,支持实单
询价
Infineon Technologies
23+
D2PAK
9000
原装正品,支持实单
询价
IR
24+
TO-263
3478
询价
Infineon
24+
NA
3321
进口原装正品优势供应
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
23+
TO-263
8560
受权代理!全新原装现货特价热卖!
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
更多IRG4BC30KD-SHR供应商 更新时间2025-5-22 10:02:00