IRG4BC30U-S

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)

Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardD2Pakpackage Benefits •Generati

IRG4BC30U-S

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT; • UltraFast: Optimized for high operating\n   frequencies 8-40 kHz in hard switching, 200\n   kHz in resonant mode\n• Generation 4 IGBT design provides tighter\n   parameter distribution and higher efficiency than\n   Generation 3\n• Industry standard D2Pak packageBenefits\n• Generation 4 IGBTs offer highest efficiency available\n• IGBTs optimized for specified application conditions\n• Designed to be a \"drop-in\" replacement for equivalent\n   industry-standard Generation 3 IR IGBTs;

IRG4BC30U-S

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 23A 100W D2PAK

IRG4BC30U-SPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardD2Pakpackage •Lead-Free Benefit

IRG4BC30U-SPBF

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 23A 100W D2PAK

IRG4BC30U-STRRP

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 23A 100W D2PAK