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IRG4BC30K

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous

文件:137.95 Kbytes 页数:8 Pages

IRF

IRG4BC30K

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes 页数:35 Pages

IRF

IRG4BC30KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations

文件:196.13 Kbytes 页数:10 Pages

IRF

IRG4BC30KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packag

文件:321.45 Kbytes 页数:11 Pages

IRF

IRG4BC30KDS

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul

文件:225.23 Kbytes 页数:10 Pages

IRF

IRG4BC30KD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul

文件:225.23 Kbytes 页数:10 Pages

IRF

IRG4BC30KD-SPBF

INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul

文件:350.48 Kbytes 页数:10 Pages

IRF

IRG4BC30KD-STRR

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul

文件:225.23 Kbytes 页数:10 Pages

IRF

IRG4BC30KPBF

INSULATED GATE BIPOLAR TRANSISTOR 

Short Circuit Rated UltraFast IGBT

文件:210.45 Kbytes 页数:9 Pages

IRF

IRG4BC30KS

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous

文件:161.85 Kbytes 页数:8 Pages

IRF

产品属性

  • 产品编号:

    IRG4BC30K

  • 制造商:

    Infineon Technologies

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    管件

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.7V @ 15V,16A

  • 开关能量:

    360µJ(开),510µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    26ns/130ns

  • 测试条件:

    480V,16A,23 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220AB

  • 描述:

    IGBT 600V 28A 100W TO220AB

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
25+
TO220
32360
INFINEON/英飞凌全新特价IRG4BC30K即刻询购立享优惠#长期有货
询价
IR
24+
TO-220
1730
询价
IT
25+
QFN
18000
原厂直接发货进口原装
询价
IR
03+
原厂原装
1000
自己公司全新库存绝对有货
询价
IR
23+
TO-220A
8650
受权代理!全新原装现货特价热卖!
询价
IR
23+
TO-220
800
专做原装正品,假一罚百!
询价
IR
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
INFINEON
25+
TO-220
3000
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
IR
23+
TO-220
50000
全新原装正品现货,支持订货
询价
更多IRG4BC30K供应商 更新时间2025-12-15 14:13:00