INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul

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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

文件：263.29 Kbytes 页数：9 Pages

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INSULATED GATE BIPOLAR TRANSISTOR


Short Circuit Rated UltraFast IGBT

文件：210.45 Kbytes 页数：9 Pages

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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous

文件：161.85 Kbytes 页数：8 Pages

IRF