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IRG4BC30KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRF

International Rectifier

IRG4BC30KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •tighterparameterdistributionandhigherefficiencythan previousgenerations •IGBTco-packag

IRF

International Rectifier

IRG4BC30KDS

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC30KD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC30KD-SPBF

INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC30KD-STRR

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC30KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4BC30KDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4BC30KD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

IRF

International Rectifier

IRG4BC30KD-SPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

IRF

International Rectifier

详细参数

  • 型号:

    IRG4BC30KD

  • 制造商:

    International Rectifier

  • 功能描述:

    IGBT TO-220

供应商型号品牌批号封装库存备注价格
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR(国际整流器)
24+
N/A
7078
原厂可订货,技术支持,直接渠道。可签保供合同
询价
IR
24+
TO-220
590
询价
IR
2015+
TO-220AB
12500
全新原装,现货库存长期供应
询价
IR
23+
TO-220
35890
询价
IR
23+
TO-220AB
8600
全新原装现货
询价
IR
23+
TO-220AB
3200
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
IR
2020+
TO-220
600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
IR
2018+
TO220
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
更多IRG4BC30KD供应商 更新时间2025-5-15 13:00:00