INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)

Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT de

文件：188.51 Kbytes 页数：8 Pages

IRF

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT D2PAK

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR

文件：307.07 Kbytes 页数：13 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件：307.07 Kbytes 页数：13 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC

文件：329.54 Kbytes 页数：11 Pages

IRF