INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighter

文件：227.86 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighte

文件：322.4 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：324.48 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：324.48 Kbytes 页数：10 Pages

IRF

600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak package

600V IGBT 与超快8-60 kHz 软恢复二极管联合封装到 TO-220 FullPak 封装中。 • 2.5kV, 60s 绝缘电压\n• 至散热器的爬电距离为 4.8 mm\n• 超快，经过优化的高达 8-40 kHz 的硬开关高工作频率\n• 与 HEXFREDTM超快、超软恢复反并联二极管联合封装的 IGBT\n• 参数分布更紧凑\n• 行业标准绝缘 TO-220 FullpakTM 封装类型\n• 无铅\n\n优势:\n• 简化装配\n• 高效率和功率密度\n• HEXFREDTM 反并联二极管将开关损耗和 EMI 降至最低;

Infineon

英飞凌

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 17A 45W TO220FP

INFINEON

英飞凌

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 17A 45W TO220FP

INFINEON

英飞凌