零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
IRG4BC30F | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Benefits •Generation4IGBTsoff | IRF International Rectifier | IRF | |
IRG4BC30F | Fit Rate / Equivalent Device Hours | IRF International Rectifier | IRF | |
IRG4BC30F | INSULATED GATE BIPOLAR TRANSISTOR | IRF International Rectifier | IRF | |
IRG4BC30F | 600V 快速 1-8 kHz 分立 IGBT,采用 TO-220AB 封装; | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
IRG4BC30F | Package:TO-220-3;包装:卷带(TR) 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 31A 100W TO220AB | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-s | IRF International Rectifier | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE | IRF International Rectifier | IRF | ||
Fast CoPack IGBT Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHyperfastFREDdiodesforultralo | IRF International Rectifier | IRF | ||
Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A ) FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythan | IRF International Rectifier | IRF | ||
600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; • 对中等工作频率进行了优化\n• 参数分布更紧凑,效率更高\n• 与 HEXFREDTM超快、超软恢复反并联二极管联合封装的 IGBT\n• 无铅\n\n优势:\n• IGBT 提供可实现的出色效率\n• 针对特定应用条件进行过优化的 IGBT\n• HEXFRED 二极管与 IGBT 并用优化。恢复特性最小化,对缓冲的要求更少甚至不需要。\n• 旨在“直接替代”同等行业内标准的第三代 IR IGBT\n; 600V IGBT 与 hyperfast 1-8 kHz 二极管联合封装到 D2-Pak 封装中\n | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
产品属性
- 产品编号:
IRG4BC30F
- 制造商:
Infineon Technologies
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
卷带(TR)
- 不同 Vge、Ic 时 Vce(on)(最大值):
1.8V @ 15V,17A
- 开关能量:
230µJ(开),1.18mJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
21ns/200ns
- 测试条件:
480V,17A,23 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-220-3
- 供应商器件封装:
TO-220AB
- 描述:
IGBT 600V 31A 100W TO220AB
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
04+ |
TO-220AB |
1000 |
全新原装 绝对有货 |
询价 | ||
IR |
23+ |
TO-220 |
35890 |
询价 | |||
IR |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INFINEON |
1503+ |
TO-220 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IR |
23+ |
TO |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
询价 | ||
Infineon Technologies |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
22+ |
TO-220 |
12245 |
现货,原厂原装假一罚十! |
询价 |
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