IRG4BC30F

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Benefits •Generation4IGBTsoff

IRG4BC30F

Fit Rate / Equivalent Device Hours

IRG4BC30F

INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC30F

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 31A 100W TO220AB

IRG4BC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRG4BC30FD1

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE

IRG4BC30FD1PBF

Fast CoPack IGBT

Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHyperfastFREDdiodesforultralo

IRG4BC30FDPBF

Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A )

FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythan

IRG4BC30FD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3. •IGBTco-packagedwithHyperfastFREDdiodesforultral

IRG4BC30FD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter. parameterdistributionandhigherefficiencythan Generation3. •IGBTco-packagedwithHyperfastFREDdiodesforultra