IRG4BC30FD-S

600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; • 对中等工作频率进行了优化\n• 参数分布更紧凑，效率更高\n• 与 HEXFREDTM超快、超软恢复反并联二极管联合封装的 IGBT\n• 无铅\n\n优势:\n• IGBT 提供可实现的出色效率\n• 针对特定应用条件进行过优化的 IGBT\n• HEXFRED 二极管与 IGBT 并用优化。恢复特性最小化，对缓冲的要求更少甚至不需要。\n• 旨在“直接替代”同等行业内标准的第三代 IR IGBT\n;

600V IGBT 与 hyperfast 1-8 kHz 二极管联合封装到 D2-Pak 封装中\n

IRG4BC30FD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3. •IGBTco-packagedwithHyperfastFREDdiodesforultral

IRG4BC30FD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter. parameterdistributionandhigherefficiencythan Generation3. •IGBTco-packagedwithHyperfastFREDdiodesforultra

IRG4BC30FD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

IRG4BC30FD-SPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

IRG4BC30FPBF

FastSpeedIGBTINSULATEDGATEBIPOLARTRANSISTOR

Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage •Lead-Free Benefits •Generatio

IRG4BC30FPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRG4BC30F-STRLP

INSULATEDGATEBIPOLARTRANSISTOR

IRG4BC30K

FitRate/EquivalentDeviceHours

IRG4BC30K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious