IRG4IBC30F

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •VeryLow1.59Vvotagedrop •2.5kV,60sinsulationvoltage •4.8mmcreapagedistancetoheatsink •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •IGBTco-packagedwithHEXFREDTMultrafast, ultrasoftrecovery

IRG4IBC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •VeryLow1.59Vvotagedrop •2.5kV,60sinsulationvoltage •4.8mmcreapagedistancetoheatsink •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •IGBTco-packagedwithHEXFREDTMultrafast, ultrasoftrecovery

IRG4IBC30FD

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 20.3A 45W TO220FP

IRG4IBC30FDPBF

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 20.3A 45W TO220FP

IRG4IBC30KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRG4IBC30KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTTECOVERYDIODE

IRG4IBC30KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •Highswitchingspeedoptimizedforupto25kHz withlowVCE(on) •ShortCircuitRating10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneration •IGBTco-packagedwithHEXFREDTMultrafast,

IRG4IBC30S

INSULATEDGATEBIPOLARTRANSISTOR

IRG4IBC30SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRG4IBC30SPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •Standard:Optimizedforminimumsaturation voltageandlowoperatingfreqencies(