INSULATED GATE BIPOLAR TRANSISOR

Features • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Generation 4 IGBTs offer h

文件：134.16 Kbytes 页数：8 Pages

IRF

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free Benefits • Generation 4

文件：329.57 Kbytes 页数：9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISOR

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 250V 98A 200W TO247AC

INFINEON

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 250V 98A 200W TO247AC

INFINEON

英飞凌