INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Features • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200 kHz in resonant mode. • Application in UPS, Welding and High Current power supply. • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Solder plated ve

文件：123.16 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Features ◾ UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200kHz in resonant mode. ◾ Application in UPS, Welding and High Current power supply. ◾ Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. ◾ Solder plated ver

文件：235.88 Kbytes 页数：9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Infineon

英飞凌

Package：TO-247-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 75A 520W TO247AC

Infineon

英飞凌