INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Features ◾ UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200kHz in resonant mode. ◾ Application in UPS, Welding and High Current power supply. ◾ Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. ◾ Solder plated ver

文件：235.88 Kbytes 页数：9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Infineon

英飞凌

Package：TO-247-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 75A 520W TO247AC

INFINEON

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Industry standard TO-247AC package. Benefits • Generation 4 IGBTs offer highest effic

文件：118.87 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Solder plated version of industry standard TO-247AC package. Benefits • Generation 4

文件：119.62 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Industry standard TO-247AC package. • Lead-Free Benefits • Generation 4 IGBTs offer

文件：236.18 Kbytes 页数：9 Pages

IRF