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IRG4PH20

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency

文件:229.85 Kbytes 页数:8 Pages

IRF

IRG4PH20

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

Infineon

英飞凌

IRG4PH20K

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency

文件:229.85 Kbytes 页数:8 Pages

IRF

IRG4PH20KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT

文件:276.79 Kbytes 页数:10 Pages

IRF

IRG4PH20KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT

文件:1.23558 Mbytes 页数:10 Pages

IRF

IRG4PH20KPBF

Short Circuit Rated UltraFast IGBT

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous

文件:390.59 Kbytes 页数:9 Pages

IRF

IRG4PH20KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:1.2447 Mbytes 页数:11 Pages

IRF

IRG4PH20KDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:1.2447 Mbytes 页数:11 Pages

IRF

IRG4PH20KPBF

INSULATED GATE BIPOLAR TRANSISTOR

文件:391.55 Kbytes 页数:9 Pages

IRF

IRG4PH20KPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

文件:391.55 Kbytes 页数:9 Pages

IRF

技术参数

  • Technology :

    IGBT Gen 4

  • Switching Frequency min max:

    30.0kHz 150.0kHz

  • Package :

    TO-247

  • Voltage Class max:

    1200.0V

  • IC(@100°) max:

    5.0A

  • IC(@25°) max:

    11.0A

  • ICpuls max:

    22.0A

  • Ptot max:

    60.0W

  • VCE(sat) :

    3.17V 

  • Eon :

    0.45mJ 

  • Eoff(Hard Switching) :

    0.44mJ 

  • td(on) :

    23.0ns 

  • tr :

    28.0ns 

  • td(off) :

    100.0ns 

  • tf :

    620.0ns 

  • QGate :

    53.0nC 

  • Ets  (max):

    0.89mJ (1.2mJ)

  • Switching Frequency :

    Gen 4 30-150 kHz

  • VCE max:

    1200.0V

供应商型号品牌批号封装库存备注价格
IR
22+
TO-247
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-247
8000
只做原装现货
询价
IR
23+
TO-247
7000
询价
IR
24+
TO-247AC
8866
询价
IR
05+
原厂原装
29426
只做全新原装真实现货供应
询价
IR
2015+
TO-247AC
12500
全新原装,现货库存长期供应
询价
IR
25+
PLCC-44
18000
原厂直接发货进口原装
询价
IR
24+
原厂封装
22
原装现货假一罚十
询价
IR
23+
TO-3P
5000
原装正品,假一罚十
询价
IOR
16+
TO-3P
10000
全新原装现货
询价
更多IRG4PH20供应商 更新时间2025-10-11 14:00:00