零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IRG4PH20K | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,VCC=720V,TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiency | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | |
IRG4PH20K | 包装:管件 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 1200V 11A 60W TO247AC | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,VCC=720V,TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,VCC=720V,TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Short Circuit Rated UltraFast IGBT Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,VCC=720V,TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
包装:卷带(TR) 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 1200V 11A TO247AC | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
包装:卷带(TR) 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 1200V 11A TO247AC | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
SINGLE-PHASEFULLWAVEBRIDGE4AMPERESFORP.C.BOARDANDHEATSINKMOUNTING | edi edi | edi | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=1200V,Vce(on)typ.=3.17V,@Vge=15V,Ic=5.0A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,VCC=720V,TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiency | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
产品属性
- 产品编号:
IRG4PH20K
- 制造商:
Infineon Technologies
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
管件
- 不同 Vge、Ic 时 Vce(on)(最大值):
4.3V @ 15V,5A
- 开关能量:
450µJ(开),440µJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
23ns/93ns
- 测试条件:
960V,5A,50 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-247-3
- 供应商器件封装:
TO-247AC
- 描述:
IGBT 1200V 11A 60W TO247AC
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-247 |
65400 |
询价 | |||
IR |
05+ |
TO-247 |
27537 |
主营IR可含税只做全新原装正品现货 |
询价 | ||
IR |
23+ |
TO-247 |
35890 |
询价 | |||
IR |
05+ |
原厂原装 |
29426 |
只做全新原装真实现货供应 |
询价 | ||
IR |
2022 |
TO247 |
265 |
原厂原装正品,价格超越代理 |
询价 | ||
IR |
23+ |
管3P |
18000 |
询价 | |||
IR |
16+ |
原厂封装 |
22 |
原装现货假一罚十 |
询价 | ||
IR |
2017+ |
TO-247 |
52145 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
IR |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
1408+ |
TO247 |
12000 |
绝对原装进口现货可开增值税发票 |
询价 |
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