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IRG4PH20K

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,VCC=720V,TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiency

IRF

International Rectifier

IRG4PH20K

Package:TO-247-3;包装:管件 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 1200V 11A 60W TO247AC

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IRG4PH20KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,VCC=720V,TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBT

IRF

International Rectifier

IRG4PH20KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,VCC=720V,TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBT

IRF

International Rectifier

IRG4PH20KPBF

Short Circuit Rated UltraFast IGBT

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,VCC=720V,TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4PH20KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PH20KDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PH20KPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PH20KPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PH20KDPBF

Package:TO-247-3;包装:卷带(TR) 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 1200V 11A TO247AC

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

产品属性

  • 产品编号:

    IRG4PH20K

  • 制造商:

    Infineon Technologies

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    管件

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    4.3V @ 15V,5A

  • 开关能量:

    450µJ(开),440µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    23ns/93ns

  • 测试条件:

    960V,5A,50 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-247-3

  • 供应商器件封装:

    TO-247AC

  • 描述:

    IGBT 1200V 11A 60W TO247AC

供应商型号品牌批号封装库存备注价格
IR
23+
TO-247
65400
询价
IR
23+
TO-247
35890
询价
IR
05+
原厂原装
29426
只做全新原装真实现货供应
询价
IR
24+
原厂封装
22
原装现货假一罚十
询价
IR
23+
TO-3P
5000
原装正品,假一罚十
询价
IOR
16+
TO-220
10000
全新原装现货
询价
IR
1816+
TO-247
6523
科恒伟业!只做原装正品,假一赔十!
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
19+
TO-247
75135
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
IR
24+
TO-247
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
更多IRG4PH20K供应商 更新时间2025-6-10 15:36:00