INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)

VCES = 1200V VCE(on) typ. = 2.97V @VGE = 15V, IC = 42A Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction

文件：200.03 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

VCES = 1200V VCE(on) typ. = 2.97V @VGE = 15V, IC = 42A Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction losses • Tigh

文件：391.31 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：396.63 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：396.63 Kbytes 页数：11 Pages

IRF

1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA package

1200V IGBT 与超快 4-20 kHz 软恢复二极管联合封装到 TO-247AA 封装中。 • 高短路额定值的 IGBT，对电机控制进行了优化\n• 低开关损耗和低通态损耗\n• 参数分布紧凑\n• 与超快软恢复反并联二极管联合封装的 IGBT\n• 爬电距离增至 5.35mm\n• 无铅\n\n优势:\n• 高额定电流联合封装 IGBT\n• 出色的功率密度，功率处理能力是 TO-247 的两倍，空间占用量却比 TO-264 少\n• HEXFREDTM 二极管经过与 IGBT 并用优化，将噪声、EMI 和开关损耗降至最低;

Infineon

英飞凌

Package：TO-274AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 78A 350W SUPER247

Infineon

英飞凌

Package：TO-274AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 78A SUPER247

Infineon

英飞凌