INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

文件：326.33 Kbytes 页数：12 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Infineon

英飞凌

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 9A 38W DPAK

INFINEON

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

文件：326.33 Kbytes 页数：12 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

文件：188.38 Kbytes 页数：10 Pages

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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)

Features • Extremely low voltage drop; 1.0V typical at 2A, 100°C • Standard: Optimized for minimum saturation voltage and low operating frequencies (

文件：120.87 Kbytes 页数：8 Pages

IRF