IRG4PC50UD-MP资料使用说明书供应代理-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRG4PC50UD-MP	文件：100 bytes Page：1 Pages	Package：TO-247-3；包装：管件类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 600V 55A 200W TO247AC	Infineon 英飞凌	Infineon
IRG4PC50UDPBF	文件：688.41 Kbytes Page：10 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack 文件：688.41 Kbytes 页数：10 Pages	IRF	IRF
IRG4PC50UDPBF	文件：697.54 Kbytes Page：11 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：697.54 Kbytes 页数：11 Pages	IRF	IRF
IRG4PC50UPBF	文件：640.23 Kbytes Page：9 Pages	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan 文件：640.23 Kbytes 页数：9 Pages	IRF	IRF

更多IRG4PC50UD-MP供应商更新时间2021-9-14 10:50:00