INSULATED GATE BIPOLAR TRANSISTOR (Fast Speed IGBT)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Solder plated version of industry standard TO-247AC package. • Lead-Free Benefits •

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IRF

INSULATED GATE BIPOLAR TRANSISTOR (Fast Speed IGBT)

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Industry standard TO-247AC package. Benefits • Generation 4 IGBTs offer highest

文件：123.65 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Features • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200 kHz in resonant mode. • Application in UPS, Welding and High Current power supply. • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Solder plated ve

文件：123.16 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Features ◾ UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200kHz in resonant mode. ◾ Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. ◾ Industry standard TO-247AC package. ◾ Lead-Free Benefits ◾ Generation 4 IGBTs o

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IRF