INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ult

文件：211 Kbytes 页数：10 Pages

IRF

IGBT

DESCRIPTION · Low Saturation Voltage · Anti-Parallel Ultra Fast Diode · Avalanche Capability · International Standard Package APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC · High Voltage Auxiliaries · Welding Machines

文件：302.2 Kbytes 页数：2 Pages

ISC

无锡固电

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-

文件：381.67 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：390.82 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：390.82 Kbytes 页数：11 Pages

IRF

600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package

600V IGBT 与超快8-60 kHz 软恢复二极管联合封装到 TO-247AC 封装中。 • 经过优化的 8-40 kHz 的硬开关高工作频率\n• IGBT 的设计提供更紧凑的参数分布和更高的效率\n• 与 HEXFREDTM 超快、超软恢复反并联二极管联合封装的 IGBT，在桥配置中使用\n• 行业标准 TO-247AC 封装\n• 无铅\n\n优势:\n• IGBT 提供可实现的高效率\n• 针对特定应用条件进行过优化的 IGBT\n• HEXFRED 二极管经过与 IGBT 并用优化。恢复特性最小化，对缓冲的要求更少甚至不需要\n• 旨在“直接替代”同等行业内标准的第三代 IR IGBT;

Infineon

英飞凌

Package：TO-247-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 23A 100W TO247AC

Infineon

英飞凌