IRG4PC30

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener

IRG4PC30F

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener

IRG4PC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

FastCoPackIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof

IRG4PC30FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT

VCES=600V VCE(on)typ.=1.59V @VGE=15V,IC=17A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa

IRG4PC30K

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhighereffi

IRG4PC30KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgen

IRG4PC30KDPBF

INSULATED GATE BIPOALR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packaged

IRG4PC30KPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevio

IRG4PC30S

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

StandardSpeedIGBT Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRG4PC30SPBF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT