IRG4PC40W

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits •Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) •Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher •Lowconductionlossesandminimalminority-carrier recombinat

IRG4PC40WPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc

IRG4PC40WPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRG4PC40WPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRG4PC40WPBF

Package：TO-247-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A 160W TO247AC

AUIRG4PC40S-E

InsulatedGateBipolarTransistor

AUIRG4PC40S-E

InsulatedGateBipolarTransistor

G4PC40U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.1.72V,@Vge=15V,Ic=20A)

Benefits •Generation4IGBTsofferhighestefficiencyavailable •IGBTsoptimizedforspecifiedapplicationconditions •Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features •UltraFast:Optimizedforhighoperating frequencies8-40kHz

G4PC40W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A)

Benefits •Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) •Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher •Lowconductionlossesandminimalminority-carrier recombinat

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.32V,@Vge=15V,Ic=31A)

StandardSpeedIGBT Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(