INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT

INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control tsc = 10 μs, @360V VCE(start), TJ = 125 °C VGE = 15V • Conbines low conduction losses with high switching speed • Latest generation design provides t

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INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

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Fit Rate / Equivalent Device Hours

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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

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