Fit Rate / Equivalent Device Hours

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IRF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

文件：582.17 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件：306.65 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)

Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Gener

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IRF