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IRG4BC20UD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGenera

IRF

International Rectifier

IRG4BC20UD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC20UD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode •Generation4IGBTdesignprovidestighterpara- meterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast,

IRF

International Rectifier

IRG4BC20UD-SPBF

ULTRA FAST COPACK IGBT

IRF

International Rectifier

IRG4BC20UD-SPBF_15

ULTRA FAST COPACK IGBT

IRF

International Rectifier

IRG4BC20UPBF

ULTRAFASTSPEEDIGBT

IRF

International Rectifier

IRG4BC20UPBF

UltraFastSpeedIGBT

Features •UltraFast:optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage •Lead-Free Benefits •Generati

IRF

International Rectifier

IRG4BC20W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.16V,@Vge=15V,Ic=6.5A)

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTde

IRF

International Rectifier

IRG4BC20WPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc

IRF

International Rectifier

IRG4BC20WPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

详细参数

  • 型号:

    IRG4BC20UD-S

  • 功能描述:

    IGBT W/DIODE 600V 13A D2PAK

  • RoHS:

  • 类别:

    分离式半导体产品 >> IGBT - 单路

  • 系列:

    -

  • 标准包装:

    30

  • 系列:

    GenX3™ IGBT

  • 类型:

    PT 电压 -

  • 集电极发射极击穿(最大):

    1200V Vge,

  • Ic时的最大Vce(开):

    3V @ 15V,100A 电流 -

  • 集电极(Ic)(最大):

    200A 功率 -

  • 最大:

    830W

  • 输入类型:

    标准

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-247-3

  • 供应商设备封装:

    PLUS247?-3

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
2015+
D2-Pak
12500
全新原装,现货库存长期供应
询价
IR
23+
D2-Pak
8600
全新原装现货
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
INFINEON
1503+
TO-263
3000
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
IR
23+
TO-263
50000
全新原装正品现货,支持订货
询价
IR
21+
TO-263
10000
原装现货假一罚十
询价
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
询价
更多IRG4BC20UD-S供应商 更新时间2025-7-23 15:56:00