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IRG4BC30

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Benefits •Generation4IGBTsoff

IRF

International Rectifier

IRG4BC30

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4BC30

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRF

International Rectifier

IRG4BC30F

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Benefits •Generation4IGBTsoff

IRF

International Rectifier

IRG4BC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRF

International Rectifier

IRG4BC30FD1

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE

IRF

International Rectifier

IRG4BC30FD1PBF

Fast CoPack IGBT

Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHyperfastFREDdiodesforultralo

IRF

International Rectifier

IRG4BC30FDPBF

Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A )

FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythan

IRF

International Rectifier

IRG4BC30FD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3. •IGBTco-packagedwithHyperfastFREDdiodesforultral

IRF

International Rectifier

IRG4BC30FD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter. parameterdistributionandhigherefficiencythan Generation3. •IGBTco-packagedwithHyperfastFREDdiodesforultra

IRF

International Rectifier

详细参数

  • 型号:

    IRG4BC30

  • 制造商:

    IRF

  • 制造商全称:

    International Rectifier

  • 功能描述:

    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

供应商型号品牌批号封装库存备注价格
IR
20+
9986
询价
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
IR
23+
TO-220
3000
全新原装
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
24+
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
IR
25+
8880
原装认准芯泽盛世!
询价
IR
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
10+
TO-263
550
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
IR
22+
SOT-263
6000
终端可免费供样,支持BOM配单
询价
IR
23+
6000
专注配单,只做原装进口现货
询价
更多IRG4BC30供应商 更新时间2025-5-28 15:48:00