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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
IRG4BC30FD-S	文件：1.25649 Mbytes Page：11 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3. •IGBTco-packagedwithHyperfastFREDdiodesforultral	IRF International Rectifier	IRF
IRG4BC30FD-SPBF	文件：1.17757 Mbytes Page：12 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter. parameterdistributionandhigherefficiencythan Generation3. •IGBTco-packagedwithHyperfastFREDdiodesforultra	IRF International Rectifier	IRF
IRG4BC30FPBF	文件：218.21 Kbytes Page：8 Pages	Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage •Lead-Free Benefits •Generatio	IRF International Rectifier	IRF
IRG4BC30K	文件：137.95 Kbytes Page：8 Pages	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious	IRF International Rectifier	IRF
IRG4BC30KD	文件：196.13 Kbytes Page：10 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations	IRF International Rectifier	IRF
IRG4BC30KDPBF	文件：321.45 Kbytes Page：11 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •tighterparameterdistributionandhigherefficiencythan previousgenerations •IGBTco-packag	IRF International Rectifier	IRF
IRG4BC30KDS	文件：225.23 Kbytes Page：10 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul	IRF International Rectifier	IRF
IRG4BC30KD-S	文件：225.23 Kbytes Page：10 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul	IRF International Rectifier	IRF
IRG4BC30KD-SPBF	文件：350.48 Kbytes Page：10 Pages	INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul	IRF International Rectifier	IRF
IRG4BC30KD-STRR	文件：225.23 Kbytes Page：10 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul	IRF International Rectifier	IRF

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技术参数

Technology ：
IGBT Gen 4
Switching Frequency min max：
8.0kHz 30.0kHz
Package ：
TO-220
Voltage Class max：
600.0V
IC(@100°) max：
17.0A
IC(@25°) max：
31.0A
ICpuls max：
124.0A
Ptot max：
100.0W
VCE(sat) ：
1.59V
Eon ：
0.23mJ
Eoff(Hard Switching) ：
1.18mJ
td(on) ：
20.0ns
tr ：
16.0ns
td(off) ：
290.0ns
tf ：
350.0ns
QGate ：
67.0nC
Ets (max)：
1.41mJ (2.0mJ)
Switching Frequency ：
Gen 4 8-30 kHz
VCE max：
600.0V

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市锦喆鸿电子有限公司	IRG4BC30	IR	20+		9986		询价
深圳市勤思达科技有限公司	IRG4BC30	IR	15+	TO-220	11560	全新原装,现货库存,长期供应	询价
深圳市永贝尔科技有限公司	IRG4BC30	IRF	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市芯泽盛世科技有限公司	IRG4BC30	IR	25+		8880	原装认准芯泽盛世！	询价
贸泽芯城（深圳）电子科技有限公司	IRG4BC30	IR	23+		10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市威雅利发展有限公司	IRG4BC30	IR	10+	TO-263	550	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市河锋鑫科技有限公司	IRG4BC30	IR	22+	SOT-263	6000	终端可免费供样,支持BOM配单	询价
深圳市创新迹电子有限公司	IRG4BC30	IR	23+		6000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	IRG4BC30	IR	23+		6000	专注配单,只做原装进口现货	询价
深圳市明嘉莱科技有限公司	IRG4BC30	IR	25+	NV	860000	明嘉莱只做原装正品现货	询价

更多IRG4BC30供应商更新时间2025-7-27 15:48:00

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