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IRG4BC20F

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage Benefits •Genera

IRF

International Rectifier

IRG4BC20FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features •Fast:optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistribution andhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recovery

IRF

International Rectifier

IRG4BC20FD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFRRECOVERYDIODE

IRF

International Rectifier

IRG4BC20FDPBF

OPTIMIZEDFORMEDIUMOPERATING

IRF

International Rectifier

IRG4BC20FD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4BC20FD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEFastCoPackIGBT

Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4BC20FD-STRL

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4BC20FPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage •Lead-Free Benef

IRF

International Rectifier

详细参数

  • 型号:

    IRG4BC20W-STRL

  • 功能描述:

    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB

供应商型号品牌批号封装库存备注价格
IR
2018+
TO263
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
IR
22+
TO263
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO263
8000
只做原装现货
询价
IR
23+
TO263
7000
询价
IR
2022+
TO220
57550
询价
IR
23+24
TO-220
59630
主营原装MOS,二三级管,肖特基,功率场效应管
询价
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
IR
23+
TO-220
3000
全新原装
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
24+
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
更多IRG4BC20W-STRL供应商 更新时间2025-5-17 13:14:00