INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)

Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package Benefits • Offers highest efficiency and short circuit capability for interme

文件：251.74 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package • Lead-Free Benefits • Offers highest efficiency and short circuit capability for intermed

文件：296.44 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)

Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak package Benefits • Offers highest efficiency and short circuit capability for intermediate application

文件：200.72 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)

Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak package Benefits • Offers highest efficiency and short circuit capability for intermediate application

文件：200.72 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：298.37 Kbytes 页数：12 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：298.37 Kbytes 页数：12 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：298.37 Kbytes 页数：12 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

• Rugged: 10µsec short circuit capable at VGS=15V\n• Low VCE(on) for 4 to 10kHz applications\n• IGBT Co-packaged with ultra-soft-recovery antiparallel diode\n• Industry standard TO-220AB packageBenefits\n• Offers highest efficiency and short circuit capability for intermediate applications\n• Provid;

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Infineon

英飞凌

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 18A 60W TO220AB

Infineon

英飞凌