首页 >IRFR24N15DTRPBFMOS(场效应管)>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-ChannelMOSFETTransistor •DESCRITION •HighSpeedPowerSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤95mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HighfrequencyDC-DCconverters Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor •DESCRITION •HighSpeedPowerSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤95mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
SMPSMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters •Lead-Free | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET짰PowerMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent •Lead-Free Applications •HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor •FEATURES •WithTO-251(IPAK)packaging •Highspeedswitching •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •DC-DCconverters •Motorcontrol •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SMPSMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters •Lead-Free | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET짰PowerMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent •Lead-Free Applications •HighfrequencyDC-DCconverters | IRF International Rectifier | IRF |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON/英飞凌 |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO252 |
20000 |
硅原只售全新原装,提供技术支持! |
询价 | ||
IR |
22+ |
TO-252AA |
34000 |
只做原装进口现货 |
询价 | ||
IR |
252 |
14 |
28 |
询价 | |||
INFINEON/英飞凌 |
23+ |
TO252 |
6000 |
只做原装/四雄微 |
询价 | ||
IR |
24+ |
TO-252 |
36800 |
询价 | |||
IR |
22+ |
TO-252 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO-252 |
7000 |
询价 |
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