首页 >IRFR9220TR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRFR9220TR | Power MOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技 | Vishay | |
IRFR9220TR | Dynamic dV/dt Rating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
Power MOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技 | Vishay | ||
Dynamic dV/dt Rating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技 | Vishay | ||
Dynamic dV/dt Rating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技 | Vishay | ||
Dynamic dV/dt Rating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技 | Vishay | ||
Dynamic dV/dt Rating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
ProgrammableRambusTMXDRTMClockGenerator | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
详细参数
- 型号：
IRFR9220TR
- 功能描述：
MOSFET P-Chan 200V 3.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
20+ |
TO-263 |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
询价 | |||
IR |
2015+ |
D-Pak |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
1318+ |
TO-252 |
23568 |
优势现货可17%税 |
询价 | ||
INTERNATIONA |
05+ |
原厂原装 |
4333 |
只做全新原装真实现货供应 |
询价 | ||
IR |
23+ |
TO-252 |
9526 |
询价 | |||
IR |
2008++ |
TO-252 |
6200 |
新进库存/原装 |
询价 | ||
IR |
23+ |
1018 |
D-Pak |
询价 | |||
进口 |
23+ |
TO-263 |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
IR |
23+ |
TO252 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
询价 |
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