Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.581 Ω (Typ.)

文件：260.399 Kbytes 页数：7 Pages

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Advanced Power MOSFET

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Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : -10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.581 Ω (Typ.)

文件：248.61 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.581 Ω (Typ.)

文件：260.399 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

文件：253.38 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体