Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.581 Ω (Typ.)

文件：260.399 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES\n■ Avalanche Rugged Technology\n■ Rugged Gate Oxide Technology\n■ Lower Input Capacitance\n■ Improved Gate Charge\n■ Extended Safe Operating Area\n■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V\n■ Low RDS(ON) : 0.581 W (Typ.) ■ Avalanche Rugged Technology\n■ Rugged Gate Oxide Technology\n■ Lower Input Capacitance\n■ Improved Gate Charge\n■ Extended Safe Operating Area\n■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V\n■ Low RDS(ON) : 0.581 W (Typ.);

ONSEMI

安森美半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.581 Ω (Typ.)

文件：255.06 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

文件：253.38 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipa

文件：547.24 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技