IRFSL52N15DPBF规格书应用电路贸易商IRF-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRFSL52N15DPBF	文件：345.45 Kbytes Page：12 Pages	HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current ● Lead-Free Applications ● High frequency DC-DC converters ● Plasma Displa 文件：345.45 Kbytes 页数：12 Pages	IRF	IRF
52N15D	文件：134.84 Kbytes Page：11 Pages	Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A) Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters 文件：134.84 Kbytes 页数：11 Pages	IRF	IRF
IIRFB52N15D	文件：338.75 Kbytes Page：2 Pages	N-Channel MOSFET Transistor 文件：338.75 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IIRFS52N15D	文件：335.27 Kbytes Page：2 Pages	N-Channel MOSFET Transistor 文件：335.27 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多IRFSL52N15DPBF供应商更新时间2025-10-5 14:00:00