Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.092 Ω(Typ.)

文件：262.87 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：397.56 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：18.73 Kbytes 页数：2 Pages

SEME-LAB

Simple Drive Requirements Ease of Paralleling Hermetically Sealed

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. Features: ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically

文件：167.51 Kbytes 页数：7 Pages

IRF

Simple Drive Requirements

文件：167.51 Kbytes 页数：7 Pages

IRF