首页 >IRFU1N60A>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

IRFU1N60A

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO

文件:156.53 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFU1N60A

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPL

文件:270.24 Kbytes 页数:13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFU1N60A

丝印:IPAK;Package:TO-251;iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =7Ω (MAX) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件:341.66 Kbytes 页数:2 Pages

ISC

无锡固电

IRFU1N60A

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Sup

文件:2.6729 Mbytes 页数:7 Pages

LUCKY-LIGHT

IRFU1N60A

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Sup

文件:2.6729 Mbytes 页数:7 Pages

KERSEMI

IRFU1N60A

SMPS MOSFET

文件:181.61 Kbytes 页数:10 Pages

IRF

IRFU1N60APBF

SMPS MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptable Power Supply ● Power Factor Correcti

文件:231.61 Kbytes 页数:10 Pages

IRF

IRFU1N60APBF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO

文件:156.53 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFU1N60APBF

Power MOSFET

文件:270.24 Kbytes 页数:13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFU1N60A

Power MOSFET

Low gate charge Qg results in simple drive requirement\nImproved gate, avalanche and dynamic dV/dt ruggedness\nFully characterized capacitance and avalanche voltage and current;

Vishay

威世

详细参数

  • 型号:

    IRFU1N60A

  • 功能描述:

    MOSFET N-Chan 600V 1.4 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
VISHAY/威世
25+
TO252
20300
VISHAY/威世原装特价IRFU1N60A即刻询购立享优惠#长期有货
询价
24+
TO-251
5000
只做原装公司现货
询价
IR
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
18+
TO-251
85600
保证进口原装可开17%增值税发票
询价
VISHAY
25+
TO-251
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR
23+
TO-251
50000
全新原装正品现货,支持订货
询价
IR
21+
TO-251
10000
原装现货假一罚十
询价
Vishay Siliconix
22+
TO2513 Short Leads IPak TO251A
9000
原厂渠道,现货配单
询价
IR
21+
TO-251
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
Vishay Siliconix
2022+
TO-251-3 短引线,IPak,TO-251A
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
更多IRFU1N60A供应商 更新时间2025-12-13 19:07:00