200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

文件：665.75 Kbytes 页数：9 Pages

Fairchild

仙童半导体

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：596.55 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：IPAK；Package：TO-251；Isc N-Channel MOSFET Transistor

文件：319.78 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，N 沟道，B-FET，200 V，4.6 A，0.9 Ω，IPAK

这些N沟道增强型功率场效应晶体管是采用飞兆专有的、平面条形DMOS技术生产的。这一先进技术是专为最大限度地降低导通电阻，提供卓越的开关性能，以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。这些器件非常适合于高效率的开关DC/DC转换器、开关电源、用于不间断电源的DC-AC转换器和电机控制。 •4.6 A，200 V，RDS(on) = 800 mΩ，条件是 VGS = 10 V\n•低栅极电荷（典型值12 nC)\n•低 Crss（典型值10 pF)\n•快速开关\n•100% 经过雪崩击穿测试\n•提高了 dv/dt 性能;

ONSEMI

安森美半导体