HEXFET짰Power MOSFET

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA

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IRF

High Efficiency Synchronous Rectification in SMPS

文件：384.16 Kbytes 页数：12 Pages

IRF

DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high

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MOTOROLA

摩托罗拉

TOPFET dual high side switch

DESCRIPTION Monolithic dual channel high side protected power switch in TOPFET2 technology assembled in a 7 pin plastic surface mount package. FEATURES • Vertical power TrenchMOS • Low on-state resistance • CMOS logic compatible • Very low quiescent current • Overtemperature protection • L

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PHI

PHI

FREQUENCY DOWN CONVERTER FOR VHF TO UHF BAND RECEIVER

DESCRIPTION The µPC3207GR is a Silicon monolithic IC designed for receiver applications. This IC consists of a double balanced mixer (DBM), local oscillator, preamplifier for precscaler operation, IF amplifier, regulator, UHF/VHF switching circuit, and so on. This one-chip IC covers a wide freq

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NEC

瑞萨