丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • High Speed Power Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤95mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.11 Kbytes 页数：2 Pages

ISC

无锡固电

High frequency DC-DC converters

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：891.94 Kbytes 页数：10 Pages

KERSEMI

HEXFET Power MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：102.74 Kbytes 页数：10 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • High Speed Power Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤95mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.11 Kbytes 页数：2 Pages

ISC

无锡固电