HEXFET Power MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：102.74 Kbytes 页数：10 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • High Speed Power Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤95mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.11 Kbytes 页数：2 Pages

ISC

无锡固电

High frequency DC-DC converters

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：891.94 Kbytes 页数：10 Pages

KERSEMI

HEXFET짰Power MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current • Lead-Free Applications • High frequency DC-DC converters

文件：228.68 Kbytes 页数：11 Pages

IRF

SMPS MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Lead-Free

文件：3.84795 Mbytes 页数：10 Pages

KERSEMI

High frequency DC-DC converters

文件：282.07 Kbytes 页数：10 Pages

IRF

High frequency DC-DC converters

文件：282.07 Kbytes 页数：10 Pages

IRF

采用 D-Pak 封装的 150V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 具备完全特性化的雪崩电压和电流\n• 低栅漏电荷，可降低开关损耗\n• 具备完全特性化的的电容，包括有效的Coss以简化设计;

Infineon

英飞凌