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IRFR9214

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

文件:155.92 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR9214

Power MOSFET

FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9214, SiHFR9214) • Straight lead (IRFU9214, SiHFU9214) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat

文件:268.5 Kbytes 页数:13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR9214

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

文件:3.3941 Mbytes 页数:7 Pages

KERSEMI

IRFR9214

Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A)

文件:107.13 Kbytes 页数:10 Pages

IRF

IRFR9214

Power MOSFET

Advanced process technology\nFully avalanche rated\nSurface-mount (IRFR9214, SiHFR9214);

Vishay

威世

IRFR9214

HEXFET Power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ω, ID = -2.7A

Description\nThird Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the design

Infineon

英飞凌

IRFR9214_V01

Power MOSFET

FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9214, SiHFR9214) • Straight lead (IRFU9214, SiHFU9214) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat

文件:268.5 Kbytes 页数:13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR9214PBF

HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0廓 , ID = -2.7A )

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the de

文件:255.29 Kbytes 页数:10 Pages

IRF

IRFR9214PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

文件:155.92 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR9214PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

文件:3.3941 Mbytes 页数:7 Pages

KERSEMI

详细参数

  • 型号:

    IRFR9214

  • 功能描述:

    MOSFET P-Chan 250V 2.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
TO 252
161426
明嘉莱只做原装正品现货
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
24+
TO-252
61
询价
IR
06+
TO-252
15000
原装库存
询价
IR
24+
原厂封装
367
原装现货假一罚十
询价
IR
2015+
D-Pak
12500
全新原装,现货库存长期供应
询价
ir
24+
N/A
6980
原装现货,可开13%税票
询价
IR
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
18+
TO-252
85600
保证进口原装可开17%增值税发票
询价
IR
18+
TO-252
41200
原装正品,现货特价
询价
更多IRFR9214供应商 更新时间2025-11-30 19:10:00