| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：155.92 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：3.3941 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：155.92 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：3.3941 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：155.92 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：3.3941 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：155.92 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：3.3941 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET 文件：3.3941 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET 文件：3.3941 Mbytes 页数：7 Pages | LUCKY-LIGHT | LUCKY-LIGHT |
详细参数
- 型号：
IRFR9214
- 功能描述：
MOSFET P-Chan 250V 2.7 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 252 |
161426 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
24+ |
TO-252 |
61 |
询价 | |||
IR |
06+ |
TO-252 |
15000 |
原装库存 |
询价 | ||
IR |
24+ |
原厂封装 |
367 |
原装现货假一罚十 |
询价 | ||
IR |
2015+ |
D-Pak |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
ir |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
询价 | ||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
IR |
18+ |
TO-252 |
41200 |
原装正品,现货特价 |
询价 |
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