IRFR9214中文资料HEXFET Power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ω, ID = -2.7A数据手册Infineon规格书
IRFR9214规格书详情
描述 Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.● P-Channel
● Surface Mount (IRFR9214)
● Straight Lead (IRFU9214)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
技术参数
- 型号：
IRFR9214
- 功能描述：
MOSFET P-Chan 250V 2.7 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
VISHAY/威世 |
24+ |
NA/ |
5750 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
24+ |
TO 252 |
161426 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
23+ |
TO-252 |
35890 |
询价 | |||
IR |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IR |
2450+ |
TO252 |
6885 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
VISHAY/威世 |
24+ |
TO-252 |
501744 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
IR |
25+23+ |
TO-252 |
28143 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VISHAY/威世 |
21+ |
NA |
12820 |
只做原装,质量保证 |
询价 | ||
IR |
24+ |
TO-252 |
61 |
询价 |
