N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode powe

文件：64.86 Kbytes 页数：8 Pages

PHI

飞利浦

Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are w

文件：123.82 Kbytes 页数：8 Pages

IRF

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional

文件：163.94 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Description Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device that HEXFET power MOSFETs are well know

文件：596.43 Kbytes 页数：8 Pages

ARTSCHIP

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process T

文件：741.17 Kbytes 页数：8 Pages

KERSEMI

Advanced Process Technology

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known

文件：167.19 Kbytes 页数：8 Pages

SYC

Power MOSFET

Power MOSFET VDSS =55V, RDS(on) = 0.07 mohm, ID = 17 A

文件：159.84 Kbytes 页数：2 Pages

TEL

Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：159.21 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：670.82 Kbytes 页数：10 Pages

IRF

isc N-Channel MOSFET Transistor

• FEATURES • With TO-262(DPAK) packaging • Surface mount • High speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switching applications

文件：325.17 Kbytes 页数：2 Pages

ISC

无锡固电