HEXFET Power MOSFET

文件：697.05 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

文件：4.33232 Mbytes 页数：10 Pages

KERSEMI

丝印：IRF5305；Package：TO-220；-60V P-Channel MOSFET

Features * VDS (V) = -60V * ID = -31A (VGS = -10V) * RDS(ON)

文件：723.45 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF5305S；Package：TO-263；-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

文件：3.58041 Mbytes 页数：8 Pages

EVVOSEMI

翊欧

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte

文件：1.09618 Mbytes 页数：10 Pages

KERSEMI

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：171.24 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

文件：697.05 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

文件：4.33232 Mbytes 页数：10 Pages

KERSEMI

丝印：IRF5305S；Package：TO-263；-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -31A (VGS = -10V) * RDS(ON)

文件：1.48095 Mbytes 页数：8 Pages

UMW

友台半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.092 Ω (Typ.)

文件：254.86 Kbytes 页数：7 Pages

Fairchild

仙童半导体