丝印：IRF5305；Package：TO-220；-60V P-Channel MOSFET

Features * VDS (V) = -60V * ID = -31A (VGS = -10V) * RDS(ON)

文件：723.45 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF5305S；Package：TO-263；-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

文件：3.58041 Mbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：IRF5305S；Package：TO-263；-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -31A (VGS = -10V) * RDS(ON)

文件：1.48095 Mbytes 页数：8 Pages

UMW

友台半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n DC-DC & DC-AC CONVERTER n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.)

文件：83.35 Kbytes 页数：5 Pages

SYC

N-CHANNEL ENHANCEMENT-MODE SILICON GATE

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS(on) = 0.140 Ω

文件：481.96 Kbytes 页数：5 Pages

TRSYS

Transys Electronics

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.26 Kbytes 页数：2 Pages

ISC

无锡固电

14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：153.03 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s

文件：47.74 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

TO-220-3L Plastic-Encapsulate MOSFETS

FEATURES Low RDS(on) VGS Rated at ± 20V Silicon Gate for Fast Switching Speed Rugged Low Drive Requirements DESCRITION Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.

文件：579.14 Kbytes 页数：2 Pages

DGNJDZ

南晶电子

N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

文件：180.59 Kbytes 页数：6 Pages

Fairchild

仙童半导体