N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s

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STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.12 Ω ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ AVALANCHE RUGGED TECHNOLOGY ■ APPLICATION ORIENTED CHARACTERIZATION ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE APPLICAT

文件：77.58 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：618.07 Kbytes 页数：10 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.09Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operati

文件：286.07 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded package. 1. ’Trench’technology 2. Low on-state resistance 3. Fast switching 4.

文件：97.02 Kbytes 页数：7 Pages

PHI

飞利浦

22A, 100V, 0.064 Ohm, N-Channel Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve

文件：125.62 Kbytes 页数：10 Pages

Intersil

Power MOSFET(Vdss=100V, Rds(on)=90mohm, Id=17A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：212.77 Kbytes 页数：8 Pages

IRF

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件：1.5565 Mbytes 页数：10 Pages

KERSEMI

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：618.07 Kbytes 页数：10 Pages

IRF

Isc N-Channel MOSFET Transistor

• FEATURES • With To-262 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：300.47 Kbytes 页数：2 Pages

ISC

无锡固电