14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s

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STMICROELECTRONICS

意法半导体

TO-220-3L Plastic-Encapsulate MOSFETS

FEATURES Low RDS(on) VGS Rated at ± 20V Silicon Gate for Fast Switching Speed Rugged Low Drive Requirements DESCRITION Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.

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DGNJDZ

南晶电子

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n DC-DC & DC-AC CONVERTER n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.)

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SYC

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

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VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, pr

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IRF

-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

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EVVOSEMI

翊欧

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

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KERSEMI

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte

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KERSEMI

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：171.24 Kbytes 页数：10 Pages

IRF