N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.12 Ω ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ AVALANCHE RUGGED TECHNOLOGY ■ APPLICATION ORIENTED CHARACTERIZATION ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE APPLICAT

文件：77.58 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：618.07 Kbytes 页数：10 Pages

IRF

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded package. 1. ’Trench’technology 2. Low on-state resistance 3. Fast switching 4.

文件：97.02 Kbytes 页数：7 Pages

PHI

飞利浦

Power MOSFET(Vdss=100V, Rds(on)=90mohm, Id=17A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：212.77 Kbytes 页数：8 Pages

IRF