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HRL634W

speciallydesignedforhighefficientdischargeapplication

CSB-BATTERYCSB Battery Co., Ltd.

希世比能源希世比能源科技股份有限公司

HSR-634WT

PowerFormCSwitch

PICPIC GmbH

PIC GmbH

IPM-C634

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪讯美国JDSU

IPM-L634

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪讯美国JDSU

IRC634

PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A)

HEXFETPowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRC634PRF

HEXFETPowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF634

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技

IRF634

PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A)

Description ThirdInternationalRectifierfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofParalleli

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF634

AdvancedPowerMOSFET

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=250V ♦LowerRDS(ON):0.327Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF634

N-CHANNEL250V-0.38ohm-8ATO-220/TO-220FPMESHOVERLAY??MOSFET

Description UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

IRF634

N-channelmosfettransistor

Features •WithTO-220package •Simpledriverequirements •Fastswitching •VDSS=250V;RDS(ON)≤0.45Ω;ID=8.1A •1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF634

N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

IRF634

N-ChannelMOSFETTransistor

DESCRIPTION •DrainCurrent-ID=8.1A@TC=25°C •DrainSourceVoltage- :VDSS=250V(Min) •StaticDrain-SourceOn-Resistance :RDS(OD=0.45Ω(Max) •FastSwitchingSpeed •LowDriveRequirement APPLICATIONS •Highcurrent,highspeedswitching •Switchmodepowersupplies •DC-DCconv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF634

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

IRF634

PowerMOSFET

VishayVishay Siliconix

威世科技

IRF-634

N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

IRF634A

AdvancedPowerMOSFET

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF634A

AdvancedPowerMOSFET

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=250V ♦LowerRDS(ON):0.327Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF634A

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

IRF634A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
23+
SOT23-6
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
23+
SOT23-6
20000
原装正品 欢迎咨询
询价
FAIRCHILD
2023+
SOT-163
50000
原装现货
询价
FAI
1305+
SOT163
12000
公司特价原装现货
询价
FAIRCHI
23+
SOT23-6
8650
受权代理!全新原装现货特价热卖!
询价
FAIRCHI
21+
SOT23-6
12588
原装正品,自己库存 假一罚十
询价
23+
N/A
59210
正品授权货源可靠
询价
FAIRCHILD
2023+
SOT23-6
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
FAIRCHILD
18+
SOT23-6
9860
全新原装现货/假一罚百!
询价
FAIRCHILD/仙童
22+
SOT23-6
25000
只有原装绝对原装,支持BOM配单!
询价
更多FDC634P整流二极管供应商 更新时间2024-5-25 11:00:00